1. product profile 1.1 general description a 600 w extremely rugged ldmos power transistor for broadcast and industrial applications in the hf to 500 mhz band. this product is an enhanced version of the blf574 using nxp's xr process to provide maximum ruggedness capa bility in the most severe applications without compromising the rf performance. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (hf to 500 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications BLF574XR; BLF574XRs power ldmos transistor rev. 1 ? 20 june 2013 product data sheet table 1. application information test signal f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw 225 50 600 23.5 74.5 pulsed rf 225 50 600 24 74.7
BLF574XR_BLF574XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 1 ? 20 june 2013 2 of 14 nxp semiconductors BLF574XR; BLF574XRs power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol BLF574XR (sot1214a) 1drain1 2drain2 3gate1 4gate2 5source [1] BLF574XRs (sot1214b) 1drain1 2drain2 3gate1 4gate2 5source [1] 4 3 5 1 2 sym117 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF574XR - flanged ceramic package; 2 mounting holes; 4 leads sot1214a BLF574XRs - earless flanged ceramic package; 4 leads sot1214b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 110 v v gs gate-source voltage ? 6+11v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
BLF574XR_BLF574XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 1 ? 20 june 2013 3 of 14 nxp semiconductors BLF574XR; BLF574XRs power ldmos transistor 5. thermal characteristics [1] t j is the junction temperature. [2] r th(j-c) is measured under rf conditions. 6. characteristics table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 150 ?c [1] [2] 0.18 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.75ma110--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 275 ma 1.25 1.7 2.25 v i dss drain leakage current v gs =0v; v ds =50v--1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -38-a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =9.625a -0.15- ? table 7. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz - 2.4 - pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz - 210 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz - 94 - pf table 8. rf characteristics test signal: cw; f = 225 mhz; rf performance at v ds =50v; i dq = 100 ma; t case = 25 ? c; unless otherwise specified; in a cl ass-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 600 w 21.65 23.5 - db rl in input return loss p l = 600 w - ? 17 ? 13 db ? d drain efficiency p l = 600 w 70 74.5 - %
BLF574XR_BLF574XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 1 ? 20 june 2013 4 of 14 nxp semiconductors BLF574XR; BLF574XRs power ldmos transistor 7. test information 7.1 ruggedness in class-ab operation the BLF574XR and BLF574XRs are capable of withstanding a load mismatch corresponding to vswr > 65 : 1 through all phases under the following conditions: v ds =50v; i dq =100ma; p l = 600 w pulsed; f = 225 mhz. 7.2 impedance information v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; typical values per section d d d 9 ' 6 9 & r v v s ) fig 2. definition of transistor impedance table 9. typical push-pull impedance simulated z i and z l device impedance; impedance info at v ds = 50 v and p l = 600 w. f z i z l (mhz) (? ) ( ? ) 225 4.67 ? j5.47 5.66 + j2.05 001aan207 gate 1 gate 2 drain 2 drain 1 z i z l
BLF574XR_BLF574XRs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 1 ? 20 june 2013 5 of 14 nxp semiconductors BLF574XR; BLF574XRs power ldmos transistor 7.3 test circuit printed-circuit board (pcb) rogers 5880: ? r = 2.2 f/m; thickness = 0.79 mm; thickness copper plating = 35 ? m. see table 10 for a list of components. fig 3. component layout for class-ab production test circuit p p p p p p p p p p p p p p 7 & |